No | Part number | Description ( Function ) | Manufacturers | |
1 | M29F800DT | 8 Mbit (1Mb x8 or 512Kb x16 / Boot Block) 5V Supply Flash Memory M29F800DT M29F800DB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE s s Figure 1. Packages – VCC = 5V ±10% for Program, Erase and Read ACCESS TIME: 55, 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical 19 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 16 Main Blocks SO44 (M) s s PROGR |
ST Microelectronics |
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Recommended search results related to M29F800DT |
Part No | Description ( Function) | Manufacturers | |
AM29F800 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only/ Boot Sector Flash Memory-Die Revision 1 SUPPLEMENT Am29F800B Known Good Die 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS s Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations — Minimizes |
AMD |
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AM29F800B | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only/ Boot Sector Flash Memory PRELIMINARY Am29F800B 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS s Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations — Minimizes system level requirements s Man |
AMD |
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AM29F800B | Sector Erase Flash Memory PRELIMINARY Am29F800T/Am29F800B 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS s 5.0 V ± 10% for read and write operations — Minimizes system level power requirements s Compatible w |
AMD |
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AM29F800B-1 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only/ Boot Sector Flash Memory-Die Revision 1 SUPPLEMENT Am29F800B Known Good Die 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS s Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations — Minimizes |
AMD |
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AM29F800T | Sector Erase Flash Memory PRELIMINARY Am29F800T/Am29F800B 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS s 5.0 V ± 10% for read and write operations — Minimizes system level power requirements s Compatible w |
AMD |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |