No | Part number | Description ( Function ) | Manufacturers | |
1 | M29F200FT | (M29Fxx0Fx) Top / Bottom Boot Block 5 V Supply Flash Memory M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features Supply voltage – VCC = 5 V Access time: 55 ns Program / Erase controller – Embedded byte/word program algorithms Erase Suspend and Resume modes Low power consumption – Standby and Automatic Standby 100,000 Program/Erase cycles per bloc |
Numonyx |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to M29F200FT |
Part No | Description ( Function) | Manufacturers | |
AM29F200 | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only/ Boot Sector Flash Memory Am29F200B 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS s 5.0 V ± 10% for read and write operations — Minimizes system level power requirements s Manufactured on 0.32 µm process technology — Compatible with |
AMD |
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AM29F200A | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only/ Boot Sector Flash Memory PRELIMINARY Am29F200A 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS s 5.0 V ± 10% for read and write operations — Minimizes system level power requirements s High performance — Access times as fast as 55 ns |
AMD |
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AM29F200B | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only/ Boot Sector Flash Memory DATA SHEET Am29F200B 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ■ 5.0 V for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compa |
AMD |
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M29F200 | 2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory M29F200BT M29F200BB 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 8µs per Byte/Word typical 7 MEMORY BLOCKS – 1 Boot Block (T |
ST Microelectronics |
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M29F200B | 2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory M29F200T M29F200B 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Progr |
ST Microelectronics |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |