No | Part number | Description ( Function ) | Manufacturers | |
1 | M29F160BB | 16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Single Supply Flash Memory M29F160BT M29F160BB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 8µs per Byte/Word typical 35 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 32 Main Blocks s s s s PROGRAM/ERASE CONTROLLER – Emb |
ST Microelectronics |
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Recommended search results related to M29F160BB |
Part No | Description ( Function) | Manufacturers | |
AM29F160D | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only/ Boot Sector Flash Memory Am29F160D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will |
AMD |
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M29F160 | 16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Single Supply Flash Memory M29F160BT M29F160BB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 8µs per Byte/Word typical 35 MEMORY BLOCKS – 1 Boot Block (Top |
ST Microelectronics |
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M29F160BT | 16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Single Supply Flash Memory M29F160BT M29F160BB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 8µs per Byte/Word typical 35 MEMORY BLOCKS – 1 Boot Block (Top |
ST Microelectronics |
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M29F160FB | (M29Fxx0Fx) Top / Bottom Boot Block 5 V Supply Flash Memory M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features Supply voltage – VCC = 5 V Access time: 55 ns Program / Erase controller – Embedded byte/word program algorithms Erase Suspend and Resume modes |
Numonyx |
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M29F160FT | (M29Fxx0Fx) Top / Bottom Boot Block 5 V Supply Flash Memory M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features Supply voltage – VCC = 5 V Access time: 55 ns Program / Erase controller – Embedded byte/word program algorithms Erase Suspend and Resume modes |
Numonyx |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |