No | Part number | Description ( Function ) | Manufacturers | |
1 | M29DW323DB90ZE1E | 32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory M29DW323DT M29DW323DB 32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical – Double Word/ Quadruple Byte Program TSOP48 (N) 12 x 2 |
ST Microelectronics |
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Recommended search results related to M29DW323DB90ZE1E |
Part No | Description ( Function) | Manufacturers | |
M29DW323DB90ZE1 | 32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory M29DW323DT M29DW323DB 32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRA |
ST Microelectronics |
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M29DW323DB90ZE1F | 32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory M29DW323DT M29DW323DB 32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRA |
ST Microelectronics |
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M29DW323DB90ZE1T | 32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory M29DW323DT M29DW323DB 32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRA |
ST Microelectronics |
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M29DW323DB90ZE6 | 32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory M29DW323DT M29DW323DB 32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRA |
ST Microelectronics |
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M29DW323DB90ZE6E | 32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory M29DW323DT M29DW323DB 32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRA |
ST Microelectronics |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |