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M295V160BT55N3T PDF Datasheet

The M295V160BT55N3T is 16 Mbit 2mb X8 Or 1mb X16 / Boot Block. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 M295V160BT55N3T
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Single Supply Flash Memory

M29F160BT M29F160BB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 8µs per Byte/Word typical 35 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 32 Main Blocks s s s s PROGRAM/ERASE CONTROLLER – Emb

ST Microelectronics
ST Microelectronics
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Recommended search results related to M295V160BT55N3T

Part No Description ( Function) Manufacturers PDF
M295V160BT55N1T   16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Single Supply Flash Memory

M29F160BT M29F160BB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 8µs per Byte/Word typical 35 MEMORY BLOCKS – 1 Boot Block (Top

ST Microelectronics
ST Microelectronics
datasheet pdf
M295V160BT55N6T   16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Single Supply Flash Memory

M29F160BT M29F160BB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 8µs per Byte/Word typical 35 MEMORY BLOCKS – 1 Boot Block (Top

ST Microelectronics
ST Microelectronics
datasheet pdf

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