No | Part number | Description ( Function ) | Manufacturers | |
1 | M28W800BB | 8 Mbit 3V Supply Flash Memory M28W800BT M28W800BB 8 Mbit (512Kb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING TIME – 10µs typical – Double Word Programming Option s COMMON FLASH INTERFACE – 64 bit Securit |
STMicroelectronics |
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Recommended search results related to M28W800BB |
Part No | Description ( Function) | Manufacturers | |
M28W800BT | 8 Mbit 3V Supply Flash Memory M28W800BT M28W800BB 8 Mbit (512Kb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING T |
STMicroelectronics |
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M28W800CB | 8 Mbit 3V Supply Flash Memory M28W800CT M28W800CB 8 Mbit (512Kb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING T |
STMicroelectronics |
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M28W800CT | 8 Mbit 3V Supply Flash Memory M28W800CT M28W800CB 8 Mbit (512Kb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING T |
STMicroelectronics |
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HYB25D128800A | 128 Mbit Double Data Rate SDRAM Data Sheet, Rev. 1.06, Jan. 2003 HYB25D128400AT(L)-[6/7/8] HYB25D128800AT(L)-[6/7/8] HYB25D128160AT(L)-[6/7/8] 128 Mbit Double Data Rate SDRAM DDR SDRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2004-01 Published by Infineon Technologies AG, St.-Martin-Str |
Infineon Technologies AG |
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HYB25D128800CE-6 | 128 Mbit Double Data Rate SDRAM D a t a S h e e t , Rev. 1.0, A p r . 2 0 0 4 HYB25D128[400/800/160]C[C/E/T](L) 128 Mbit Double Data Rate SDRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2004-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany © Infi |
Infineon Technologies AG |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |