| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | M28F256 | 256 Kbit Flash Memory M28F256 256 Kbit (32Kb x8, Bulk) Flash Memory 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES INTEGRATED ERASE/PROGRAM-STOP TIMER 20 YEARS DATA RETENTION – Defectivity below 1ppm/year ELECTRONIC SIG |
 STMicroelectronics |
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Recommended search results related to M28F256 |
| Part No | Description ( Function) | Manufacturers | |
| AM28F256 | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory FINAL Am28F256 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum access time s CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention |
 Advanced Micro Devices |
|
| AM28F256-120EC | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory FINAL Am28F256 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum access time s CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention |
Advanced Micro Devices |
|
| AM28F256-120ECB | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory FINAL Am28F256 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum access time s CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention |
Advanced Micro Devices |
|
| AM28F256-120EE | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory FINAL Am28F256 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum access time s CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention |
Advanced Micro Devices |
|
| AM28F256-120EEB | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory FINAL Am28F256 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum access time s CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention |
Advanced Micro Devices |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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