No | Part number | Description ( Function ) | Manufacturers | |
9 | M27V400 | 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM M27V400 4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM NOT FOR NEW DESIGN s s M27V400 is replaced by the M27W400 3V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 4 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Stand-by Current 20µA 40 40 s s s s 1 1 FDIP40W (F) PDIP40 (B) s s s |
STMicroelectronics |
|
8 | M27V400-100B1TR | 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM M27V400 4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM NOT FOR NEW DESIGN s s M27V400 is replaced by the M27W400 3V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 4 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Stand-by Current 20µA 40 40 s s s s 1 1 FDIP40W (F) PDIP40 (B) s s s |
STMicroelectronics |
|
7 | M27V400-100B6TR | 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM M27V400 4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM NOT FOR NEW DESIGN s s M27V400 is replaced by the M27W400 3V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 4 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Stand-by Current 20µA 40 40 s s s s 1 1 FDIP40W (F) PDIP40 (B) s s s |
STMicroelectronics |
|
6 | M27V400-100F1TR | 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM M27V400 4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM NOT FOR NEW DESIGN s s M27V400 is replaced by the M27W400 3V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 4 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Stand-by Current 20µA 40 40 s s s s 1 1 FDIP40W (F) PDIP40 (B) s s s |
STMicroelectronics |
|
5 | M27V400-100F6TR | 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM M27V400 4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM NOT FOR NEW DESIGN s s M27V400 is replaced by the M27W400 3V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 4 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Stand-by Current 20µA 40 40 s s s s 1 1 FDIP40W (F) PDIP40 (B) s s s |
STMicroelectronics |
|
4 | M27V400-100XB1TR | 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM M27V400 4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM NOT FOR NEW DESIGN s s M27V400 is replaced by the M27W400 3V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 4 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Stand-by Current 20µA 40 40 s s s s 1 1 FDIP40W (F) PDIP40 (B) s s s |
STMicroelectronics |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |