No | Part number | Description ( Function ) | Manufacturers | |
1 | M24L416256SA | 4-Mbit (256K x 16) Pseudo Static RAM ESMT PSRAM Features • Wide voltage range: 2.7V–3.6V • Access time: 55 ns, 60 ns and 70 ns • Ultra-low active power — Typical active current: 1 mA @ f = 1 MHz — Typical active current: 8 mA @ f = fmax (70-ns speed) • Ultra low standby power • Automatic power-down when deselected • CMOS for optimum speed/power M24L416256SA 4-Mbit (256K x 16 |
Elite Semiconductor Memory Technology |
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Recommended search results related to M24L416256SA |
Part No | Description ( Function) | Manufacturers | |
M24L416256DA | 4-Mbit (256K x 16) Pseudo Static RAM ESMT PSRAM Features • Advanced low-power architecture •High speed: 55 ns, 60 ns and 70 ns •Wide voltage range: 2.7V to 3.6V •Typical active current: 1 mA @ f = 1 MHz •Low standby power •Automatic power-down when deselected M24L416256DA 4-Mbit (25 |
Elite Semiconductor Memory Technology |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |