Datasheet M24L216128SA Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	M24L216128SA	2-Mbit (128K x 16) Pseudo Static RAM ESMT PSRAM Features • Wide voltage range: 2.7V–3.6V • Access Time: 55 ns, 70 ns • Ultra-low active power — Typical active current: 1mA @ f = 1 MHz — Typical active current: 14 mA @ f = fmax (For 55-ns) —Typical active current: 8 mA @ f = fmax (For 70-ns) • Ultra low standby power �	Elite Semiconductor Memory Technology

M24L21612 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
M24L216128SA	2-Mbit (128K x 16) Pseudo Static RAM ESMT PSRAM Features • Wide voltage range: 2.7V–3.6V • Access Time: 55 ns, 70 ns • Ultra-low active power — Typical active current: 1mA @ f = 1 MHz — Typical active current: 14 mA @ f = fmax (For 55-ns) —Typical active current: 8 mA @ f = fmax (For 70-ns) • Ultra l	Elite Semiconductor Memory Technology
M24L216128DA	2-Mbit (128K x 16) Pseudo Static RAM ESMT PSRAM Features ‧Advanced low-power architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.7V to 3.6V • Typical active current: 1 mA @ f = 1 MHz • Low standby power • Automatic power-down when deselected M24L216128DA 2-Mbit (128K x 1	Elite Semiconductor Memory Technology

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Número de pieza	Descripción	Fabricantes	PDF
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