No | Part number | Description ( Function ) | Manufacturers | |
1 | LH2111 | (LH2111 / LH2311) Dual Voltage Comparators w w a D . General Description w S a t e e h U 4 t m o .c LH2111/LH2311 Dual Voltage Comparators LH2111/LH2311 August 1992 LH2111/LH2311 Dual Voltage Comparators Features n n n n n Wide operating supply range ± 15V to a single +5V Low input currents 6 nA High sensitivity 10 µV Wide differential input range ± 30V High output drive 50 mA, 50V The LH2111 series of dual vo |
National Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
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Hitachi Semiconductor |
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2SK2111 | N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2111 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2111 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance |
NEC |
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2SK2111 | MOS Field Effect Transistor SMD Type MOS Field Effect Transistor 2SK2111 MOSFICET Features Low on-resistance RDS(on)=0.6 MAX.@VGS=4.0V,ID=0.5A High switching speed SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 12 3 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.12.50 -0.1 +0.14.00 -0.1 Unit: mm 1.50+0.1 -0.1 0.44+0.1 -0.1 + |
Kexin |
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2SK2111-HF | N-Channel MOSFET SMD Type N-Channel MOSFET 2SK2111-HF MOSFET ■ Features ● VDS (V) = 60V ● ID = 1 A Drain (D) ● RDS(ON) < 0.45Ω (VGS = 10V) ● RDS(ON) < 0.6Ω (VGS = 4V) ● Pb−Free Package May be Available. Gate (G) Gate protection Internal diode diode Source (S) The G |
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