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LGU1K182MELB PDF Datasheet

The LGU1K182MELB is Aluminum ElectrolytIC Capacitor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 LGU1K182MELB
Aluminum Electrolytic Capacitor

ALUMINUM ELECTROLYTIC CAPACITORS GU Snap-in Terminal Type, 105°C Standard series Withstanding 3000 hours application of rated ripple current at 105°C. Compliant to the RoHS directive (2011/65/EU). GW High Lipple Current GU Smaller Low Profile GN GJ Specifications Item Category Temperature Range Rated Voltage Range Rated Capacitance Range Capacitance Tolerance Leakage

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Recommended search results related to LGU1K182MELB

Part No Description ( Function) Manufacturers PDF
LGU1K182MELA   Aluminum Electrolytic Capacitor

ALUMINUM ELECTROLYTIC CAPACITORS GU Snap-in Terminal Type, 105°C Standard series Withstanding 3000 hours application of rated ripple current at 105°C. Compliant to the RoHS directive (2011/65/EU). GW High Lipple Current GU Smaller Low Profile GN GJ Specifications Item C

Nichicon
Nichicon
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LGU1K182MELZ   Aluminum Electrolytic Capacitor

ALUMINUM ELECTROLYTIC CAPACITORS GU Snap-in Terminal Type, 105°C Standard series Withstanding 3000 hours application of rated ripple current at 105°C. Compliant to the RoHS directive (2011/65/EU). GW High Lipple Current GU Smaller Low Profile GN GJ Specifications Item C

Nichicon
Nichicon
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2DB1182Q   32V PNP MEDIUM POWER TRANSISTOR

Features  BVCEO > -32V  IC = -2A High Continuous Collector Current  ICM = -3A Peak Pulse Current  Epitaxial Planar Die Construction  Low Collector-Emitter Saturation Voltage  Ideal for Medium Power Switching or Amplification Applications  Totally Lead-Free &

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TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1182 2SA1182 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Unit: mm • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA • Comp

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2SA1182-HF   PNP Transistors

SMD Type Transistors PNP Transistors 2SA1182-HF SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 +0.22.8 -0.1 ■ Features ● Collector Current Capability IC=-0.5A ● Collector Emitter Voltage VCEO=-32V ● Complementary to 2SC2859-HF. ● Pb−Free Package May be Available. The G�

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