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LGU1E123MELZ PDF Datasheet

The LGU1E123MELZ is Aluminum ElectrolytIC Capacitor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 LGU1E123MELZ
Aluminum Electrolytic Capacitor

ALUMINUM ELECTROLYTIC CAPACITORS GU Snap-in Terminal Type, 105°C Standard series Withstanding 3000 hours application of rated ripple current at 105°C. Compliant to the RoHS directive (2011/65/EU). GW High Lipple Current GU Smaller Low Profile GN GJ Specifications Item Category Temperature Range Rated Voltage Range Rated Capacitance Range Capacitance Tolerance Leakage

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Recommended search results related to LGU1E123MELZ

Part No Description ( Function) Manufacturers PDF
LGU1E123MELA   Aluminum Electrolytic Capacitor

ALUMINUM ELECTROLYTIC CAPACITORS GU Snap-in Terminal Type, 105°C Standard series Withstanding 3000 hours application of rated ripple current at 105°C. Compliant to the RoHS directive (2011/65/EU). GW High Lipple Current GU Smaller Low Profile GN GJ Specifications Item C

Nichicon
Nichicon
datasheet pdf
LGU1E123MELB   Aluminum Electrolytic Capacitor

ALUMINUM ELECTROLYTIC CAPACITORS GU Snap-in Terminal Type, 105°C Standard series Withstanding 3000 hours application of rated ripple current at 105°C. Compliant to the RoHS directive (2011/65/EU). GW High Lipple Current GU Smaller Low Profile GN GJ Specifications Item C

Nichicon
Nichicon
datasheet pdf
2SA1123   Silicon PNP Epitaxial Transistor

Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 5.1±0.2 Unit: mm 5.0±0.2 4.0±0.2 s Features q q q q Satisfactory foward current transfer ratio hFE collector current IC characteristics. Hig

Panasonic Semiconductor
Panasonic Semiconductor
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2SA1123   Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)

Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 5.1±0.2 Unit: mm 5.0±0.2 4.0±0.2 s Features q q q q Satisfactory foward current transfer ratio hFE collector current IC characteristics. Hig

Panasonic Semiconductor
Panasonic Semiconductor
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2SB1123   PNP / NPN Epitaxial Planar Silicon Transistors

Ordering number : ENN1727D 2SB1123 / 2SD1623 PNP / NPN Epitaxial Planar Silicon Transistors 2SB1123 / 2SD1623 High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Package Dimensions unit : mm 2038A Feature

Sanyo Semicon Device
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