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LET9130 PDF Datasheet

The LET9130 is Rf Power Transistors Ldmos Enhanced Technology. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 LET9130
RF POWER TRANSISTORS Ldmos Enhanced Technology

LET9130 RF POWER TRANSISTORS Ldmos Enhanced Technology PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • IS-95 CDMA: 865-895 MHz / 28 V POUT = 25 W EFF. = 29 % • EDGE: 920-960 MHz / 28 V POUT = 45 W EFF. = 38 % • GSM: 920-960 MHz / 28 V POUT = 135 W EFF. = 51 % • EXCELLENT THERMAL STABILITY • BeO FREE PACKAGE • INTERNAL INPUT MATCHING • ESD PROTECTION

STMicroelectronics
STMicroelectronics
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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