No | Part number | Description ( Function ) | Manufacturers | |
1 | LET9045S | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE • HIGH GAIN • ESD PROTECTION • AVAILABLE IN TAPE & REEL with TR SUFFIX DESCRIPTION The LET9045S is a |
STMicroelectronics |
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Recommended search results related to LET9045S |
Part No | Description ( Function) | Manufacturers | |
LET9045 | RF power transistor LET9045 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary data Features ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 45 W with 18.5 dB gain @ 960 MHz / 28 V Plastic pa |
ST Microelectronics |
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LET9045C | RF power transistor LET9045C RF power transistor the LdmoST family Features ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 45 W with 18.5 dB gain @ 960 MHz BeO free package In compliance with the 2002/95/EC european directive M243 epoxy seal |
ST Microelectronics |
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AGR09045E | Lateral MOSFET AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple acces |
PEAK electronics |
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AGR19045EF | Transistor AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 199 |
TriQuint Semiconductor |
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B59045B | (B59xxx) Line Card Applications Telecom Line Card Applications, Leaded Disks Applications I Overcurrent protection for line cards B59*** B 10**, B 11**, B 16**, C 10** Features I Compliant with ITU-T K20, K21, K45 – basic level lightning surges (10/700 µs) – basic level power induction (600 V, 1 A, 0,2 |
EPCOS |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |