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LET9045S PDF Datasheet

The LET9045S is Rf Power Transistors Ldmos Enhanced Technology In PlastIC Package. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 LET9045S
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE • HIGH GAIN • ESD PROTECTION • AVAILABLE IN TAPE & REEL with TR SUFFIX DESCRIPTION The LET9045S is a

STMicroelectronics
STMicroelectronics
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Recommended search results related to LET9045S

Part No Description ( Function) Manufacturers PDF
LET9045   RF power transistor

LET9045 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary data Features ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 45 W with 18.5 dB gain @ 960 MHz / 28 V Plastic pa

ST Microelectronics
ST Microelectronics
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LET9045C   RF power transistor

LET9045C RF power transistor the LdmoST family Features ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 45 W with 18.5 dB gain @ 960 MHz BeO free package In compliance with the 2002/95/EC european directive M243 epoxy seal

ST Microelectronics
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AGR09045E   Lateral MOSFET

AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple acces

PEAK electronics
PEAK electronics
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AGR19045EF   Transistor

AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 199

TriQuint Semiconductor
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B59045B   (B59xxx) Line Card Applications

Telecom Line Card Applications, Leaded Disks Applications I Overcurrent protection for line cards B59*** B 10**, B 11**, B 16**, C 10** Features I Compliant with ITU-T K20, K21, K45 – basic level lightning surges (10/700 µs) – basic level power induction (600 V, 1 A, 0,2

EPCOS
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