Datasheet LET9002 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	LET9002	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package LET9002 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 2 W with 17 dB gain @ 960 MHz / 26 V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION • S	STMicroelectronics

LET9 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
LET9150	RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs LET9150 RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Preliminary data Features ■ ■ ■ ■ Excellent thermal stability Common source configuration push-pull POUT = 150 W with 18 dB gain @ 860 MHz BeO-free pack	ST Microelectronics
LET9045S	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE • HI	STMicroelectronics
LET9045	RF power transistor LET9045 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary data Features ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 45 W with 18.5 dB gain @ 960 MHz / 28 V Plastic pa	ST Microelectronics

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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