No | Part number | Description ( Function ) | Manufacturers | |
3 | LE28F4001C | 4M-Bit (512k 8) Flash EEPROM Preliminary Specifications CMOS LSI LE28F4001CTS-12 4M-Bit (512k × 8) Flash EEPROM Features CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Fast Access Time: 120 ns Low Power Consumption Active Current(Read): 25 mA (Max.) Standby Current: 20 µA (Max.) High Read/Write Reliability Sector-write Endurance Cycles |
Sanyo Semicon Device |
|
2 | LE28F4001CTS | 4M-Bit (512k 8) Flash EEPROM Preliminary Specifications CMOS LSI LE28F4001CTS-12 4M-Bit (512k × 8) Flash EEPROM Features CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Fast Access Time: 120 ns Low Power Consumption Active Current(Read): 25 mA (Max.) Standby Current: 20 µA (Max.) High Read/Write Reliability Sector-write Endurance Cycles |
Sanyo Semicon Device |
|
1 | LE28F4001CTS-12 | 4M-Bit (512k 8) Flash EEPROM Preliminary Specifications CMOS LSI LE28F4001CTS-12 4M-Bit (512k × 8) Flash EEPROM Features CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Fast Access Time: 120 ns Low Power Consumption Active Current(Read): 25 mA (Max.) Standby Current: 20 µA (Max.) High Read/Write Reliability Sector-write Endurance Cycles |
Sanyo Semicon Device |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |