No | Part number | Description ( Function ) | Manufacturers | |
2 | LE28DW1621T | 16 Megabit FlashBank Memory 16 Megabit FlashBank Memory LE28DW1621T-80T (Draft3) FEATURES: 1 Sp ec ifi ca tio ns • • • • • • • • • • Single 3.0-Volt Read and Write Operations • Separate Memory Banks by Address Space – Bank1: 4Mbit (256K x 16 / 512K x 8) Flash – Bank2: 12Mbit (768K x 16 / 1536K x 8) Flash – Simultaneous Read and Write Capability Read Access Time – 80 ns La |
Sanyo Semicon Device |
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1 | LE28DW1621T-80T | 16 Megabit FlashBank Memory 16 Megabit FlashBank Memory LE28DW1621T-80T (Draft3) FEATURES: 1 Sp ec ifi ca tio ns • • • • • • • • • • Single 3.0-Volt Read and Write Operations • Separate Memory Banks by Address Space – Bank1: 4Mbit (256K x 16 / 512K x 8) Flash – Bank2: 12Mbit (768K x 16 / 1536K x 8) Flash – Simultaneous Read and Write Capability Read Access Time – 80 ns La |
Sanyo Semicon Device |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |