No | Part number | Description ( Function ) | Manufacturers | |
1 | LD266 | GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays LD 260 LD 262 ... LD 269 7.4 7.0 1.9 1.7 0.5 0.4 2.54 mm spacing 2.7 2.5 0.25 0.15 2.1 1.5 0.4 A GEO06367 A Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q GaAs-IR-Lumineszenzdiode, hergestellt im Schmelzepitaxieverfahren q Hohe Zuverlässigkeit |
Siemens Group |
0  1  2  3  4  5  6  7  8 9 |
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List of most widely used semiconductors
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
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