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LD242 PDF Datasheet

The LD242 is Gaas Infrared Emitter, Gaas-ir-lumineszenzdiode. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
5 LD242
GaAs Infrared Emitter

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 242 ø0.45 2.54 mm spacing Chip position ø4.3 ø4.1 1 0.9 .1 1.1 .9 0 2.7 1 14.5 12.5 3.6 3.0 ø5.5 ø5.2 GET06625 Anode (LD 242, BPX 63, SFH 464) Cathode (SFH 483) Approx. weight 0.5 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q GaAs-IR-Lumineszenzdi

Siemens Group
Siemens Group
pdf
4 LD242
GaAs-IR-Lumineszenzdiode

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant LD 242 Wesentliche Merkmale • Hergestellt im Schmelzepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Großer Öffnungskegel • Gehäusegleich mit BP 103, BPX 63, SFH 464, SFH 483 • Anwendungsklasse nach DIN 40 040 GQC Anwendungen �

OSRAM
OSRAM
pdf
3 LD242-2
GaAs Infrared Emitter

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 242 ø0.45 2.54 mm spacing Chip position ø4.3 ø4.1 1 0.9 .1 1.1 .9 0 2.7 1 14.5 12.5 3.6 3.0 ø5.5 ø5.2 GET06625 Anode (LD 242, BPX 63, SFH 464) Cathode (SFH 483) Approx. weight 0.5 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q GaAs-IR-Lumineszenzdi

Siemens Group
Siemens Group
pdf
2 LD242-3
GaAs Infrared Emitter

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 242 ø0.45 2.54 mm spacing Chip position ø4.3 ø4.1 1 0.9 .1 1.1 .9 0 2.7 1 14.5 12.5 3.6 3.0 ø5.5 ø5.2 GET06625 Anode (LD 242, BPX 63, SFH 464) Cathode (SFH 483) Approx. weight 0.5 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q GaAs-IR-Lumineszenzdi

Siemens Group
Siemens Group
pdf
1 LD242E7800
GaAs Infrared Emitter

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 242 ø0.45 2.54 mm spacing Chip position ø4.3 ø4.1 1 0.9 .1 1.1 .9 0 2.7 1 14.5 12.5 3.6 3.0 ø5.5 ø5.2 GET06625 Anode (LD 242, BPX 63, SFH 464) Cathode (SFH 483) Approx. weight 0.5 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q GaAs-IR-Lumineszenzdi

Siemens Group
Siemens Group
pdf

[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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