No | Part number | Description ( Function ) | Manufacturers | |
1 | LC35V1000BM | Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM Ordering number : ENN*7056 CMOS IC LC35V1000BM, BTS-70U Asynchronous Silicon Gate 1M (131,072 words ×8 bits) SRAM Preliminary Overview The LC35V1000BM and LC35V1000BTS-70U are asynchronous silicon gate CMOS static RAM devices with a 131,072-word by 8-bit structure. They provide two chip enable pins (CE1 and CE2) for device select/deselect control and one output enable pin (O |
Sanyo |
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LC35V1000BTS-70U | Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM Ordering number : ENN*7056 CMOS IC LC35V1000BM, BTS-70U Asynchronous Silicon Gate 1M (131,072 words ×8 bits) SRAM Preliminary Overview The LC35V1000BM and LC35V1000BTS-70U are asynchronous silicon gate CMOS static RAM devices with a 131,072-word by 8-bit structure. They provid |
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