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Datasheet LBC846BDW1T1 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | LBC846BDW1T1 | Dual General Purpose Transistors NPN Duals LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors www.datasheet4u.com
NPN Duals
These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.
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LBC846BDW1T1 LBC847BDW1 | Leshan Radio Company | transistor |
2 | LBC846BDW1T1G | Dual General Purpose Transistors LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
NPN Duals
These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.
We declare that the material of product compliance w | Leshan Radio Company | transistor |
LBC Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | LBC3225T100KR | Wire-wound Chip Inductors Spec Sheet
INDUCTORS
Wire-wound Chip Inductors (LB series) LBC3225T100KR
Features
Item Summary 10μH(±10%), 540mA, 1210 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs
Products characteristics table
CaseSize (EIA/JIS) Inductance Inductance Measuring Frequency Taiyo Yuden inductor | | |
2 | LBC807-16LT1 | General Purpose Transistors PNP Silicon LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
www.datasheet4u.com
PNP Silicon
FEATURE
ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO(max) = -45 V. ƽGeneral purpose switching and amplification. ƽNPN complement: LBC817 Series. ƽPb-Free Package is available. Leshan Radio Company transistor | | |
3 | LBC807-16LT1G | General Purpose Transistors LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO(max) = -45 V. ƽGeneral purpose switching and amplification. ƽPNP complement: LBC807 Series. ƽ We declare that the material of product complianc Leshan Radio Company transistor | | |
4 | LBC807-16LT3G | General Purpose Transistors LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO(max) = -45 V. ƽGeneral purpose switching and amplification. ƽPNP complement: LBC807 Series. ƽ We declare that the material of product complianc Leshan Radio Company transistor | | |
5 | LBC807-16WT1G | General Purpose Transistors LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO(max) = -45 V. ƽGeneral purpose switching and amplification. ƽPNP complement: LBC807 Series. ƽWe declare that the material of product complian Leshan Radio Company transistor | | |
6 | LBC807-16WT3G | General Purpose Transistors LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO(max) = -45 V. ƽGeneral purpose switching and amplification. ƽPNP complement: LBC807 Series. ƽWe declare that the material of product complian Leshan Radio Company transistor | | |
7 | LBC807-25LT1 | General Purpose Transistors PNP Silicon LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
www.datasheet4u.com
PNP Silicon
FEATURE
ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO(max) = -45 V. ƽGeneral purpose switching and amplification. ƽNPN complement: LBC817 Series. ƽPb-Free Package is available. Leshan Radio Company transistor | |
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Número de pieza | Descripción | Fabricantes | |
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