No | Part number | Description ( Function ) | Manufacturers | |
2 | LB120A | TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR DC COMPONENTS CO., LTD. R LB120A DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR Description Designed for use in high-voltage switching applications. TO-92 Pinning 1 = Emitter 2 = Collector 3 = Base .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage |
ETC |
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1 | LB120A3 | General Purpose NPN Epitaxial Planar Transistor CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C618A3 Issued Date : 2009.07.07 Revised Date : Page No. : 1/3 LB120A3 Features • Low collector saturation voltage • High breakdown voltage, VCEO=400V (min.) • Pb-free package Symbol LB120A3 Outline TO-92 B:Base C:Collector E:Emitter E CB Absolute Maximum Ratings (Ta=25°C) P |
CYStech Electronics |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |