No | Part number | Description ( Function ) | Manufacturers | |
1 | LAS6581 | (LAS6380 - LAS6580) 8 Amp Switching Regulators DataSheet 4 U .com www.DataSheet4U DataSheet 4 U .com www.DataSheet4U DataSheet 4 U .com www.DataSheet4U DataSheet 4 U .com |
Lambda Semiconductors |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to LAS6581 |
Part No | Description ( Function) | Manufacturers | |
2N6581 | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package 2N6581 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.19 |
Seme LAB |
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2N6581 | Trans GP BJT NPN 450V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
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2N6581 | Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N6581 DESCRIPTION ·Excellent Safe Operating Area ·High Voltage,High Speed ·Low Saturation Voltage ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) APPLICATIONS ·Off-line power s |
Inchange Semiconductor |
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6581 | Sound Interface Device w w w .d e e h s a t a . u t4 m o c |
Commodore Semiconductor |
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B65811 | RM cores are supplied RM 8 Core I In accordance with IEC 60431 I Cores without center hole B65811 for transformer applications I RM cores are supplied in sets Magnetic characteristics (per set) with center hole without center hole 0,59 38 64 55 2 430 mm–1 mm mm2 mm2 mm3 Σl/A le Ae A min Ve 0,6 |
EPCOS |
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