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LA214 PDF Datasheet

The LA214 is Photocoupler. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 LA214
Photocoupler

Photocoupler Part Name: LA214 Features ‧SOP package 4 Pin type in miniature design ‧600% minimum current transfer ratio ‧1500V rms Input/Output isolation ‧AC input. Applications ‧Telephones ‧Programmable controllers ‧System appliances, measuring instruments. ‧Signal transmission between circuits of different potentials and impedances. Dimensions(Unit: mm inch) 4

ETC
ETC
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Recommended search results related to LA214

Part No Description ( Function) Manufacturers PDF
ISLA214P   ADC

14-Bit, 250MSPS/200MSPS/130MSPS ADC ISLA214P The ISLA214P is a series of low power, high performance 14-bit analog-to-digital converters. Designed with Intersil’s proprietary FemtoCharge™ technology on a standard CMOS process, the series supports sampling rates of up to 250M

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ISLA214P50   500MSPS ADC

datasheet39.com 14-Bit, 500MSPS ADC ISLA214P50 The ISLA214P50 is a 14-bit, 500MSPS analog-to-digital converter designed with Intersil’s proprietary FemtoCharge™ technology on a standard CMOS process. The ISLA214P50 is part of a pin-compatible portfolio of 12 to 16-bit A/

Intersil
Intersil
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ISLA214S50   500/350 MSPS JESD204B High Speed Serial Output ADC

datasheet39.com 14-Bit, 500/350 MSPS JESD204B High Speed Serial Output ADC ISLA214S50 The ISLA214S50 is a series of low-power, high-performance, 14-bit, analog-to-digital converters. Designed with FemtoCharge™ technology on a standard CMOS process, the series supports samp

Intersil
Intersil
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1214GN-400LV   Broad Band

1214GN-400LV 400 Watts - 50 Volts, 4.5ms, 30% Broad Band 1200 - 1400 MHz GENERAL DESCRIPTION The 1214GN-400LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 400 Watts of pulsed RF output power at 4.5ms pulse widt

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1N214   (1N200 - 1N222) General Purpose Diodes

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International Semiconductor
International Semiconductor
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