No | Part number | Description ( Function ) | Manufacturers | |
1 | L9958SB | Low RDSON SPI controlled H-Bridge L9958 Low RDSON SPI controlled H-Bridge '!0'03 PowerSO-20 '!0'03 PowerSSO24 '!0'03 PowerSO16 Features Programmable current regulation peak threshold by SPI up to 8.6 A typ. Operating battery supply voltage 4.0 V to 28 V Operating Vdd supply voltage 4.5 V to 5.5 V All pins withstand 19 V, Vs and output pins withstand 40 V Full path Ron fro |
STMicroelectronics |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to L9958SB |
Part No | Description ( Function) | Manufacturers | |
L9958 | Low RDSON SPI controlled H-Bridge L9958 Low RDSON SPI controlled H-Bridge '!0'03 PowerSO-20 '!0'03 PowerSSO24 '!0'03 PowerSO16 Features Programmable current regulation peak threshold by SPI up to 8.6 A typ. Operating battery supply voltage 4.0 V to 28 V Operating Vdd supply voltage |
STMicroelectronics |
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L9958XP | Low RDSON SPI controlled H-Bridge L9958 Low RDSON SPI controlled H-Bridge '!0'03 PowerSO-20 '!0'03 PowerSSO24 '!0'03 PowerSO16 Features Programmable current regulation peak threshold by SPI up to 8.6 A typ. Operating battery supply voltage 4.0 V to 28 V Operating Vdd supply voltage |
STMicroelectronics |
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AD9958 | 500 MSPS DDS Data Sheet FEATURES 2 synchronized DDS channels @ 500 MSPS Independent frequency/phase/amplitude control between channels Matched latencies for frequency/phase/amplitude changes Excellent channel-to-channel isolation (>72 dB) Linear frequency/phase/amplitude sweeping capability U |
Analog Devices |
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FDS9958 | Dual P-Channel MOSFET FDS9958 Dual P-Channel PowerTrench® MOSFET July 2007 FDS9958 Dual P-Channel PowerTrench MOSFET -60V, -2.9A, 105mΩ Features Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A RoHS Compliant ® tm General Description Thes |
Fairchild Semiconductor |
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FDS9958_F085 | Dual P-Channel PowerTrench MOSFET FDS9958_F085 Dual P-Channel PowerTrench® MOSFET November 2008 FDS9958_F085 Dual P-Channel PowerTrench® MOSFET -60V, -2.9A, 105mΩ Features General Description Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A Qualified |
Fairchild Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |