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L8711P PDF Datasheet

The L8711P is SilICon Gate Enhancement Mode Rf Power Ldmos Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 L8711P
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

polyfet rf devices L8711P General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance

Polyfet RF Devices
Polyfet RF Devices
pdf

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[1]    

List of most widely used semiconductors

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( 1.2V to 37V)

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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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