No | Part number | Description ( Function ) | Manufacturers | |
1 | L3080 | 30V/800mA INTEGRATED POWER LED DRIVER UNISONIC TECHNOLOGIES CO., LTD L3080 Preliminary 30V/800mA INTEGRATED POWER LED DRIVER CMOS IC DESCRIPTION The UTC L3080 is a continuous conduction mode inductive step-down converter, designed for driving single or multiple series connected LEDs. Using a few external components. The UTC L3080 has a build-in power switch, based on different input voltage, The UTC L3080 |
Unisonic Technologies |
0  1  2  3  4  5  6  7  8 9 |
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Part No | Description ( Function) | Manufacturers | |
MSL3080 | 8 String 60mA LED Drivers 5, 6 and 8 String 60mA LED Drivers with Integrated Boost Controller ______________ General Description The MSL3050/MSL3060/MSL3080 multi-channel LED drivers with integrated boost regulator controller offer a complete solution to drive parallel LED strings at up to 40V. The LED cu |
ATMEL Corporation |
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SBL3080CT | (SBL3030CT - SBL30100CT) SCHOTTKY BARRIER RECTIFIER BLGALAXY ELECTRICAL SCHOTTKY BARRIER RECTIFIER FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protecti |
Galaxy Semi-Conductor |
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SBL3080PT | (SBL3030PT - SBL30100PT) SCHOTTKY BARRIER RECTIFIER BLGALAXY ELECTRICAL SCHOTTKY BARRIER RECTIFIER FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protecti |
Galaxy Semi-Conductor Holdings |
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2SK3080 | Silicon N Channel MOS FET High Speed Power Switching 2SK3080 Silicon N Channel MOS FET High Speed Power Switching ADE-208-635A (Z) 2nd. Edition May 1998 Features • Low on-resistance R DS(on) = 20 mΩ typ. (V GS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline TO–220AB D G 1 2 S 3 1. Gate 2. D |
Hitachi Semiconductor |
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5082-3080 | SILICON PIN DIODE 5082-3080 SILICON PIN DIODE PACKAGE STYLE 15 DESCRIPTION: The ASI 5082-3080 PIN Diode is Designed for Low Power RF Switching and Attenuating Applications. MAXIMUM RATINGS I V PDISS TJ TSTG TSOLD 250 mA 100 V 250 mW @ TC = 25 °C -65 °C to +150 °C -65 °C to +150 °C 260 °C |
Advanced Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |