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L3080 PDF Datasheet

The L3080 is 30V/800ma Integrated Power Led Driver. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 L3080
30V/800mA INTEGRATED POWER LED DRIVER

UNISONIC TECHNOLOGIES CO., LTD L3080 Preliminary 30V/800mA INTEGRATED POWER LED DRIVER CMOS IC  DESCRIPTION The UTC L3080 is a continuous conduction mode inductive step-down converter, designed for driving single or multiple series connected LEDs. Using a few external components. The UTC L3080 has a build-in power switch, based on different input voltage, The UTC L3080

Unisonic Technologies
Unisonic Technologies
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5, 6 and 8 String 60mA LED Drivers with Integrated Boost Controller ______________ General Description The MSL3050/MSL3060/MSL3080 multi-channel LED drivers with integrated boost regulator controller offer a complete solution to drive parallel LED strings at up to 40V. The LED cu

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SBL3080CT   (SBL3030CT - SBL30100CT) SCHOTTKY BARRIER RECTIFIER

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SBL3080PT   (SBL3030PT - SBL30100PT) SCHOTTKY BARRIER RECTIFIER

BLGALAXY ELECTRICAL SCHOTTKY BARRIER RECTIFIER FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protecti

Galaxy Semi-Conductor Holdings
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2SK3080   Silicon N Channel MOS FET High Speed Power Switching

2SK3080 Silicon N Channel MOS FET High Speed Power Switching ADE-208-635A (Z) 2nd. Edition May 1998 Features • Low on-resistance R DS(on) = 20 mΩ typ. (V GS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline TO–220AB D G 1 2 S 3 1. Gate 2. D

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5082-3080   SILICON PIN DIODE

5082-3080 SILICON PIN DIODE PACKAGE STYLE 15 DESCRIPTION: The ASI 5082-3080 PIN Diode is Designed for Low Power RF Switching and Attenuating Applications. MAXIMUM RATINGS I V PDISS TJ TSTG TSOLD 250 mA 100 V 250 mW @ TC = 25 °C -65 °C to +150 °C -65 °C to +150 °C 260 °C

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