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Datasheet KTK5132 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | KTK5132 | N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH) SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES °§2.5 Gate Drive. °§Low Threshold Voltage : Vth=0.5°≠1.5V. °§High Speed. °§Small Package. °§Enhancement-Mode.
KTK5132E
N CHANNEL MOS FIELD EFFECT TRANSISTOR
E B
2
D 3
DIM A B
C | .gif){kind=small} KEC(Korea Electronics) | transistor |
| 2 | KTK5132 | N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH) SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES °§2.5 Gate Drive. °§Low Threshold Voltage : Vth=0.5°≠1.5V. °§High Speed. °§Small Package. °§Enhancement-Mode.
KTK5132E
N CHANNEL MOS FIELD EFFECT TRANSISTOR
E B
2
D 3
DIM A B
C | KEC(Korea Electronics) | transistor |
| 3 | KTK5132E | N-CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS
FEATURES 2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode.
1.5V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage Gate-Source Voltage
V |  KEC | transistor |
| 4 | KTK5132E | N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH) SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES °§2.5 Gate Drive. °§Low Threshold Voltage : Vth=0.5°≠1.5V. °§High Speed. °§Small Package. °§Enhancement-Mode.
KTK5132E
N CHANNEL MOS FIELD EFFECT TRANSISTOR
E B
2
D 3
DIM A B
C | KEC(Korea Electronics) | transistor |
| 5 | KTK5132S | N-CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS
FEATURES 2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode.
1.5V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage Gate-Source Voltage
V | KEC | transistor |
KTK Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | KTK-R | Fast-Acting Fuses Bussmann®
LIMITRON®
Fast-Acting Fuses 13/32” x 1-1/2”, Class CC - 600 Volt, 1/10 - 30 Amps
Dimensional Data • • • •
KTK-R
(±0.031) (38.1mm)
1.5Љ
LIMITRON® fast-acting fuse. Melamine tube. Nickel-plated brass endcaps. U.L. Listed for branch circuit protection. Rejection type; fo  Limitron fuse | | |
| 2 | KTK117 | N-Channel FET Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
KEC mosfet | | |
| 3 | KTK161 | N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (HIGH FREQUENCY/ VHF BAND AMPLIFIER) KEC(Korea Electronics) transistor | | |
| 4 | KTK211 | N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (HIGH FREQUENCY/ VHF BAND AMPLIFIER) SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES
Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz). High Forward Transfer Admittance.
A
KTK211
N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR
L
E B
L
Extremely Low Reverse Transfer Capacitance. : Crss=0.1pF( KEC(Korea Electronics) transistor | | |
| 5 | KTK5131E | N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH) SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES °§2.5 Gate Drive. °§Low Threshold Voltage : Vth=0.5°≠1.5V. °§High Speed. °§Small Package. °§Enhancement-Mode.
KTK5131E
N CHANNEL MOS FIELD EFFECT TRANSISTOR
E B
2
D 3
DIM A B
C KEC(Korea Electronics) transistor | | |
| 6 | KTK5131S | N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH) KEC(Korea Electronics) transistor | | |
| 7 | KTK5132 | N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH) SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES °§2.5 Gate Drive. °§Low Threshold Voltage : Vth=0.5°≠1.5V. °§High Speed. °§Small Package. °§Enhancement-Mode.
KTK5132E
N CHANNEL MOS FIELD EFFECT TRANSISTOR
E B
2
D 3
DIM A B
C KEC(Korea Electronics) transistor | |
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