No | Part number | Description ( Function ) | Manufacturers | |
2 | KTD2060 | Silicon NPN Power Transistors INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KTD2060 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector Power Dissipation- : PC= 25W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 3A, IB= 0.3A) ·Complement to Type KTB1368 APPLICATIONS ·Designed for general purpose applications |
Inchange Semiconductor |
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1 | KTD2060 | TRIPLE DIFFUSED NPN TRANSISTOR SEMICONDUCTOR TECHNICAL DATA KTD2060 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Good Linearity of hFE. Complementary to KTB1368. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Rang |
KEC |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |