No | Part number | Description ( Function ) | Manufacturers | |
2 | KTD1510 | Silicon NPN Power Transistors INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification KTD1510 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.5V(Max) @IC= 7A ·High DC Current Gain : hFE= 5000(Min) @ IC= 7A, VCE= 4V ·Complement to Type KTB2510 APPLICATIONS ·High power amplifier applicatio |
Inchange Semiconductor |
|
1 | KTD1510 | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER DARLINGTON TRANSISTOR. FEATURES Complementary to KTB2510. Recommended for 60W Audio Amplifier Output Stage. KTD1510 TRIPLE DIFFUSED NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector PowerDissipation (Tc=25 ) Junct |
KEC |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |