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Datasheet KTD1414 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | KTD1414 | Silicon NPN Power Transistors INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
KTD1414
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain
: hFE= 2000(Min) @ IC= 1A, VCE= |
 Inchange Semiconductor |
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| 1 | KTD1414 | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
KTD1414
EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS.
FEATURES High DC Current Gain : hFE=2000(Min.) at VCE=2V, IC=1A.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emi |
 KEC |
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