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Datasheet KTB2510 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | KTB2510 | Silicon PNP Power Transistors INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
KTB2510
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -2.5V(Max) @IC= -7A ·High DC Current Gain
: hFE= 5000(Min) @ IC= -7A, |
 Inchange Semiconductor |
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| 1 | KTB2510 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER DARLINGTON APPLICATION.
FEATURES Complementary to KTD1510 Recommended for 60W Audio Amplifier Output Stage.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current C |
 KEC |
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