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Datasheet KTB1366 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | KTB1366 | PNP Transistor RoHS KTB1366
TO-220F
KTB1366 TRANSISTOR (PNP)
DFEATURES Power dissipation
TPCM:
2 W (Tamb=25℃)
.,LCollector current
ICM: -3 Collector-base voltage
A
OV(BR)CBO:
-60 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
1. BASE 2. COLLECTOR 3. EMITTER
123
ICEL |
 WEJ |
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| 2 | KTB1366 | Silicon PNP Power Transistors INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
KTB1366
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·Collector Power Dissipation-
: PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) |
 Inchange Semiconductor |
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| 1 | KTB1366 | TRIPLE DIFFUSED PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
KTB1366
TRIPLE DIFFUSED PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. Collector Power Dissipation : PC=25W (Tc=25 ) Complementary to KTD2058.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
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