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Datasheet KTA1664 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | KTA1664 | PNP Transistor RoHS KTA1664
KTA1664 TRANSISTOR (PNP)
DFEATURES Power dissipation
TPCM: 0.5 W (Tamb=25℃)
.,LCollector current
ICM: -0.8 Collector-base voltage
A
OV(BR)CBO:
-35 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR 3. EMITTER
1 2 3 |
 WEJ |
 |
| 3 | KTA1664 | EPITAXIAL PLANAR PNP TRANSISTOR J
BR E
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES ᴌ1W (Mounted on Ceramic Substrate). ᴌSmall Flat Package. ᴌComplementary to KTC4376.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector |
 KEC |
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| 2 | KTA1664 | PNP Transistor KTA1664
TRANSISTOR (PNP)
FEATURES z Complementary to KTC4376 z Small Flat Package z High Current Application
SOT-89-3L
1. BASE 2. COLLECTOR 3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter V |
 Jin Yu Semiconductor |
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| 1 | KTA1664 | PNP Epitaxial Planar Transistors KTA166
PNP Epitaxial Planar Transistors
P b Lead(Pb)-Free
1. BASE 2. COLLECTOR 3. EMITTER
1
2
3
SOT-89
ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temp |
 WEITRON |
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