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Datasheet KTA1663 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | KTA1663 | PNP Transistor RoHS KTA1663
KTA1663 TRANSISTOR (PNP)
DFEATURES
Power dissipation
TPCM: 0.5 W (Tamb=25℃)
Collector current
.,LICM: -1.5
Collector-base voltage
A
V(BR)CBO: -35
V
Operating and storage junction temperature range
OTJ, Tstg: -55℃ to +150℃
1 2 3
SOT-89
1. BASE 2. COLLECTOR (HEAT SINK) 3. |
 WEJ |
 |
| 3 | KTA1663 | EPITAXIAL PLANAR PNP TRANSISTOR J
BH E
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES 1W (Mounted on Ceramic Substrate). Small Flat Package. Complementary to KTC4375.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
-30
Collector-Emitter Voltage
VCEO
-30
Emitter-Base Volt |
 KEC |
|
| 2 | KTA1663 | PNP Epitaxial Planar Transistors PNP Epitaxial Planar Transistors
P b Lead(Pb)-Free
ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO
IC PD Tj Tstg
KTA1 |
 WEITRON |
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| 1 | KTA1663 | PNP Transistor KTA1663
TRANSISTOR (PNP)
FEATURES z High current applications z Complementary to KTC4375
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector P |
 Jin Yu Semiconductor |
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