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KTA1658 PDF Datasheet

The KTA1658 is Epitaxial Planar PNP Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 KTA1658
EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA KTA1658 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Good Linearity of hFE. Complementary to KTC4369. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature VCBO VCEO VE

KEC
KEC
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1165892   High power NPN silicon power transistors

1165892 High power NPN silicon power transistors. These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features: • Forward biased second breakdown current capability IS/b = 2.5 A dc at VCE = 60V dc. • Pb-free package

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1165899   High power NPN silicon transistors

1165899 TO-3 High power NPN silicon transistors. Features: • High voltage capability. • High current capability. • Fast switching speed. Applications: Switch mode power supplies. Flyback and forward single transistor low power converters. Description: The BUX48/A silicon m

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2SA1658   SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1658 DESCRIPTION ·With TO-220F package ·Complement to type 2SC4369 ·Good linearity of hFE APPLICATIONS ·For general purpose applications PINNING PIN 1 2 3 Base Collector Emit

SavantIC
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2SA1658   POWER TRANSISTOR

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1658 DESCRIPTION ·With TO-220F package ·Complement to type 2SC4369 ·Good linearity of hFE APPLICATIONS ·For general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified

Inchange Semiconductor
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2SB1658   AUDIO FREQUENCY AMPLIFIER/ SWITCHING PNP SILICON EPITAXIAL TRANSISTORS

DATA SHEET SILICON TRANSISTOR 2SB1658 AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS FEATURES • Low VCE(sat) VCE(sat) = −0.15 V Max (@lC/lB = 1.0 A/50 mA) 3.8 ± 0.2 (0.149) PACKAGE DIMENSIONS in millimeters (inches) 8.5 MAX. 2.8 MAX. (0.334 MAX.)

NEC
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