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Datasheet KTA1298 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | KTA1298 | PNP Transistors SMD Type
■ Features
● Collector Power Dissipation: PC=200mW ● Collector Current: IC=-800mA
Transistors
PNP Transistors KTA1298
SOT-23-3
2.9 +0.2 -0.1
0.4 +0.1 -0.1
3
Unit: mm
+0.21.6 -0.1
0.55 0.4
+0.22.8 -0.1
12
0.95 +0.1 -0.1 1.9 +0.1 -0.2
+0.21.1 -0.1
0.15 +0.02 -0.02
1. Base 2. Em |  Kexin | transistor |
| 2 | KTA1298 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION.
FEATURES High DC Current Gain : hFE=100 320. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) (IC=-500mA, IB=-20mA). Suitable for Driver Stage of Small Motor. Complementary to KTC3265. Small Package.
M |  KEC | transistor |
| 3 | KTA1298 | Silicon Epitaxial Planar Transistor BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z High DC current gain:hFE=100-320. z Low saturation voltage:VCE(sat)=-0.4V(Max)
(IC=-500mA,IB=B -20mA). z Suitable for driver stage of small motor. z Complementary to KTC3265. z Small package.
Pb
Lead-fre |  Galaxy Semi-Conductor | transistor |
| 4 | KTA1298 | PNP Silicon Transistors PNP Silicon Transistors
MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous
Symbol
VCEO
VCBO VEBO
IC
THERMAL CHARACTERISTICS
Characteristics Total Device Dissipation FR-5 Board (1) TA =25 C Derate above 25 C Thermal |  WEITRON | transistor |
| 5 | KTA1298 | Silicon PNP transistor KTA1298
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.
特征 / Features
直流电流增益高,饱和压降低,与 KSC3265 互补。 High hFE, low saturation voltage, complementary pair with KSC |  BLUE ROCKET ELECTRONICS | transistor |
KTA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | KTA-267 | Loop Powered 4-20mA Temperature Sensor KTA-267 Loop Powered 4-20mA Temperature Sensor
• • • • • • • • • • • KTD-267
Loop Powered 4-20mA output -10°C to 125°C Measurement Range Typical Accuracy of +/- 0.5°C Worst case Accuracy of +/- 2°C at 25°C Worst case Accuracy of +/- 3°C at 125°C DIN Rail Mounting Optio  Ocean Controls sensor | | |
| 2 | KTA1001 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
CAMERA STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION.
FEATURES hFE=100 320 (VCE=-2V, IC=-0.5A). hFE=70(Min.) (VCE=-2V, IC=-3A). Low Collector Saturation Voltage. : VCE(sat)=-0.5V(Max.) (IC=-3A, IB=-75mA). High Power Dissipation. : PC=1W(Tc=25 ), PC=0.5W(Ta=25 ).
MA KEC transistor | | |
| 3 | KTA1021 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES ᴌExcellent hFE Linearity.
: hFE(2)=25(Min.) at VCE=-6V, IC=-400mA ᴌ1 Watt Amplifier Application. ᴌComplementary to KTC1020.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Colle KEC transistor | | |
| 4 | KTA1023 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
FEATURE Complementary to KTC1027.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature
VCBO VC KEC transistor | | |
| 5 | KTA1023 | PNP Plastic Encapsulated Transistor Elektronische Bauelemente
KTA1023
-0.8A , -120V PNP Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURE
Low collector to emitter saturation voltage VCE(sat). Audio power amplifier High Current
CLASSIFICATION OF hFE
Product-Rank
KTA1  SeCoS transistor | | |
| 6 | KTA1024 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
FEATURES High Voltage : VCEO=-150V. Low Output Capacitance : Cob=5.0pF(Max.). High Transition Frequency : fT=120MHz (Typ.). Complementary to KTC3206.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Volt KEC transistor | | |
| 7 | KTA1036 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES ᴌLow Collector Saturation Voltage
: VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. ᴌComplementary to KTC2016.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Co KEC transistor | |
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