| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | KTA1242L | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR TECHNICAL DATA STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES hFE=100 320 (VCE=-2V, IC=-0.5A). Low Collector Saturation Voltage. : VCE(sat)=-0.5V (IC=-3A, IB=-75mA). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag Collector Current Base Current Collector Power Dissipation Junction |
 KEC |
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| KTA1242D | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR TECHNICAL DATA STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES hFE=100 320 (VCE=-2V, IC=-0.5A). Low Collector Saturation Voltage. : VCE(sat)=-0.5V (IC=-3A, IB=-75mA). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emi |
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| 2SA1242 | Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications 2SA1242 Unit: mm • Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A) |
 Toshiba Semiconductor |
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| 2SA1242 | Silicon PNP Power Transistor isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1242 DESCRIPTION ·hFE=100-320(IC= -0.5A; VCE= -2V) ·hFE=70(Min)(IC= -4A; VCE= -2V) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max)( IC= -4A; IB= -0.1A) ··High Power Dissipation- : PC= 10W@TC=25� |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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