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Datasheet KSK211 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | KSK211 | N-CHANNEL JUNCTION FET (FM TUNER VHF AMPLIFIER) |  Samsung semiconductor | mosfet |
KSK Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | KSK117 | N-CHANNEL JUNCTION FET (LOW FREQUENCY LOW NOISE AMP.) Samsung semiconductor mosfet | | |
| 2 | KSK123 | N0CHANNEL JUNCTION FET (AF IMPEDANCE CONVERTER) Samsung semiconductor mosfet | | |
| 3 | KSK161 | N-CHANNEL JUNCTION FET (FM TUNER VHF AMPLIFIER) Samsung semiconductor mosfet | | |
| 4 | KSK211 | N-CHANNEL JUNCTION FET (FM TUNER VHF AMPLIFIER) Samsung semiconductor mosfet | | |
| 5 | KSK30 | N-CHANNEL (LOW NOISE PRE-AMP. USE) Samsung semiconductor data | | |
| 6 | KSK595H | Capacitor Microphone Applications KSK595H
KSK595H
Capacitor Microphone Applications
• Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic
3
2 1
SOT-23
1.Drain 2. Source 3. Gate
Si N-channel Junction FET
Absolute Maximum Ratings Ta=25°  Fairchild Semiconductor capacitor | | |
| 7 | KSK596 | Capacitor Microphone Applications KSK596
KSK596
Capacitor Microphone Applications
• Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic
1
TO-92S
1.Source 2. Gate 3. Drain
Si N-channel Junction FET
Absolute Maximum Ratings Ta=25°C unle Fairchild Semiconductor capacitor | |
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