No | Part number | Description ( Function ) | Manufacturers | |
3 | KSD560 | Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification KSD560 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 3.0A ·Low Saturation Voltage ·Complement to Type KSB601 APPLICATIONS ·Designed for low frequency power amplifiers and low speed switching applications AB |
Inchange Semiconductor |
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2 | KSD560 | NPN (LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE) |
Samsung semiconductor |
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1 | KSD560 | Low Frequency Power Amplifier KSD560 KSD560 Low Frequency Power Amplifier • Low Speed Switching Industrial Use • Complement to KSB601 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Co |
Fairchild Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |