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Datasheet KSD526 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | KSD526 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD526
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Collector Power Dissipation-
: PC= 30W(Max)@ TC= 25℃ ·Complement to Type KSB596
APPLICATIONS ·Designed for |
Inchange Semiconductor |
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1 | KSD526 | Power Amplifier Applications KSD526
KSD526
Power Amplifier Applications
• Complement to KSB596
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage E |
Fairchild Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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