No | Part number | Description ( Function ) | Manufacturers | |
1 | KSD5014 | Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5014 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Coll |
Inchange Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
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Part No | Description ( Function) | Manufacturers | |
1N5014A | (1N5008A - 1N5042A) DIODE Free Datasheet http:/// |
New Jersey Semi-Conductor |
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2N5014 | SILICON EPITAXIAL NPN TRANSISTOR 2N5014 MECHANICAL DATA Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) SILICON EPITAXIAL NPN TRANSISTOR 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 ( |
Seme LAB |
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2N5014 | 0.5AMP HIGH VOLTAGE NPN TRANSISTOR 450 VOLTS |
ETC |
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2N5014 | Trans GP BJT NPN 900V 0.5A 3-Pin TO-39 |
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2SC5014 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT = 12 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation 2.1 ± 0.2 1.25 ± |
NEC |
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