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Datasheet KSD1408 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | KSD1408 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD1408
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max)@IC= 3A ·Good Linearity of hFE ·Complement to Type KSB1017
APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 2 |
 Inchange Semiconductor |
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| 1 | KSD1408 | Power Amplifier Applications KSD1408
KSD1408
Power Amplifier Applications
• Complement to KSB1017
1
TO-220F 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Volta |
 Fairchild Semiconductor |
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