No | Part number | Description ( Function ) | Manufacturers | |
1 | KPS11N60F | N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA KPS11N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=600V, ID=11A D |
KEC |
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Part No | Description ( Function) | Manufacturers | |
KPS11N60D | N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switchin |
KEC |
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2SA1160 | Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications 2SA1160 Unit: mm • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 |
Toshiba Semiconductor |
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2SA1160 | Plastic-Encapsulated Transistors Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors TO-92MOD 1. EMITTER 2SA1160 FEATURE Power dissipation TRANSISTOR (PNP) 2. COLLECTOR 3. BASE ww.datasheet39.comom PCM : 0.9 W (Tamb=25℃) Collector current ICM: -2A Collector-base voltage V(BR)CBO: - |
TRANSYS Electronics Limited |
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2SB1160 | SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1160 DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1715 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifi |
SavantIC |
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2SD1160 | Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SD1160 Switching Applications Suitable for Motor Drive Applications 2SD1160 Unit: mm • High DC current gain • Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode Ab |
Toshiba Semiconductor |
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