No | Part number | Description ( Function ) | Manufacturers | |
1 | KMM5364003BSW | 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4 DRAM MODULE KMM5364003BSW/BSWG KMM5364003BSW/BSWG Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM5364003B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364003B consists of two CMOS 4Mx16bits and one CMOS Quad CAS 4Mx4bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate. |
Samsung Semiconductor |
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Recommended search results related to KMM5364003BSW |
Part No | Description ( Function) | Manufacturers | |
KMM5364003CK | (KMM5364103CK / KMM5364003CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas DRAM MODULE KMM5364003CK/CKG KMM5364103CK/CKG 4Byte 4Mx36 SIMM (4Mx4 & 16M Quad CAS base) Revision 0.1 Nov. 1997 DRAM MODULE Revision History Version 0.1 (Nov. 1997) • Changed the mode of parity check component from EDO to FP, refer to KMM5364003CK/CKG KMM5364103CK/CKG PA |
Samsung Semiconductor |
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KMM5364003CSW | 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MBx4 DRAM MODULE KMM5364003CSW/CSWG 4Byte 4Mx36 SIMM (4Mx16 & Quad CAS 4Mx4 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5364003CSW/CSWG DRAM MODULE KMM5364003CS |
Samsung Semiconductor |
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