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Datasheet KMB471-101 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | KMB471-101 | Single-pulse triggering SCR 北京耀华德昌电子有限公司
型号:KMB471
特点: 坡膜合金铁芯 工作频率 100Hz~1000Hz 抗电强度 2500V AC/1min 与德国 ZKB471/001 兼容,可替代 ZKB409。
用途: 适用于 100A 以下可控硅的单脉冲触发
外形尺寸:(尺寸单位为 mm)
主视图
� | YHDC | data |
KMB Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | KMB010P30QA | P-Channel Trench MOSFET SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Battery pack.
FEATURES VDSS=-30V, ID=-10A. Drain-Source ON Resistance. KEC mosfet | | |
2 | KMB012N30QA | N-Channel Trench MOSFET SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for DC/DC Converter and Battery pack..
FEATURES VDSS=30V, ID=12A. Drain to KEC mosfet | | |
3 | KMB014P30QA | Trench MOSFET
SEMICONDUCTOR
TECHNICAL DATA
KMB014P30QA
P-Ch Trench MOSFET
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance,, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for portable for port KEC mosfet | | |
4 | KMB030N30D | N-Channel Trench MOSFET SEMICONDUCTOR
TECHNICAL DATA
KMB030N30D
N-Ch Trench MOSFET
General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, portable equipment and battery powered systems.
FEATURES VDSS=30V, ID=30A. Low Drain-Source ON Resistance. : RDS(ON) KEC mosfet | | |
5 | KMB035N40DB | N-Channel Trench MOSFET SEMICONDUCTOR
TECHNICAL DATA
KMB035N40DB
N-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power Supply.
FE KEC mosfet | | |
6 | KMB035N40DC | N-Channel Trench MOSFET SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and power Supply.
FEATURES VDSS=40V, ID=35A. Low Drai KEC mosfet | | |
7 | KMB050N60P | N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction , electronic lamp ballasts based on KEC transistor | |
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Número de pieza | Descripción | Fabricantes | |
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