No | Part number | Description ( Function ) | Manufacturers | |
1 | KM736V789 | 128Kx36 Synchronous SRAM KM736V789 Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev. No. 0.0 0.1 0.2 0.3 History Initial draft Change 7.5 bin to 7.2 Change speed symbol 6.0/6.7/7.2/8.5 to 60/67/72/85 Draft Date May . 15. 1997 January . 13 . 1998 February. 02. 1998 Remark Preliminary Preliminary Preliminary Preliminary Change DC characteristics |
Samsung Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to KM736V789 |
Part No | Description ( Function) | Manufacturers | |
KM736V747 | (KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM KM736V747 KM718V847 Document Title 128Kx36 & 256Kx18 Flow-Through NtRAMTM 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Changed tCD from 8.0ns to 8.5ns at -8 2. Changed tCYC from 13ns to 12ns at -10 3. Changed DC c |
Samsung Semiconductor |
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KM736V749 | (KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAM KM736V749 KM718V849 Document Title 128Kx36 & 256Kx18 Pipelined NtRAMTM 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75 2. Changed DC condition at Icc and parameters ISB1 ; fro |
Samsung Semiconductor |
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KM736V787 | 128Kx36 Synchronous SRAM KM736V787 Document Title 128Kx36-Bit Synchronous Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev. No. 0.0 0.1 History Initial draft Modify power down cycle timing & Interleaved read timing, Insert Note 4 at AC timing characteristics. Change ISB1 value from 10mA to 30mA |
Samsung Semiconductor |
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KM736V790 | 128Kx36 Synchronous SRAM KM736V790 Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev. No. 0.0 0.1 History Initial draft Change speed symbol 6.0/6.7/7.5/8.5 to 60/67/75/85, Change 7.5 bin to 7.2 Change speed bin from 60/67/75/85 to 72/85/10. Change |
Samsung Semiconductor |
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KM736V795 | 128Kx36 Synchronous SRAM KM736V795 Document Title 128Kx36 Synchronous SRAM 128Kx36-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 History Initial draft Change DC characteristics VDD condition from VDD=3.3V+10%/-5% Change Input/output leackage currant from ±1µA to ±2µA Modi |
Samsung Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |