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KM736V789 PDF Datasheet

The KM736V789 is 128kx36 Synchronous Sram. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 KM736V789
128Kx36 Synchronous SRAM

KM736V789 Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev. No. 0.0 0.1 0.2 0.3 History Initial draft Change 7.5 bin to 7.2 Change speed symbol 6.0/6.7/7.2/8.5 to 60/67/72/85 Draft Date May . 15. 1997 January . 13 . 1998 February. 02. 1998 Remark Preliminary Preliminary Preliminary Preliminary Change DC characteristics

Samsung Semiconductor
Samsung Semiconductor
pdf

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Recommended search results related to KM736V789

Part No Description ( Function) Manufacturers PDF
KM736V747   (KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM

KM736V747 KM718V847 Document Title 128Kx36 & 256Kx18 Flow-Through NtRAMTM 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Changed tCD from 8.0ns to 8.5ns at -8 2. Changed tCYC from 13ns to 12ns at -10 3. Changed DC c

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KM736V749   (KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAM

KM736V749 KM718V849 Document Title 128Kx36 & 256Kx18 Pipelined NtRAMTM 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75 2. Changed DC condition at Icc and parameters ISB1 ; fro

Samsung Semiconductor
Samsung Semiconductor
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KM736V787   128Kx36 Synchronous SRAM

KM736V787 Document Title 128Kx36-Bit Synchronous Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev. No. 0.0 0.1 History Initial draft Modify power down cycle timing & Interleaved read timing, Insert Note 4 at AC timing characteristics. Change ISB1 value from 10mA to 30mA

Samsung Semiconductor
Samsung Semiconductor
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KM736V790   128Kx36 Synchronous SRAM

KM736V790 Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev. No. 0.0 0.1 History Initial draft Change speed symbol 6.0/6.7/7.5/8.5 to 60/67/75/85, Change 7.5 bin to 7.2 Change speed bin from 60/67/75/85 to 72/85/10. Change

Samsung Semiconductor
Samsung Semiconductor
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KM736V795   128Kx36 Synchronous SRAM

KM736V795 Document Title 128Kx36 Synchronous SRAM 128Kx36-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 History Initial draft Change DC characteristics VDD condition from VDD=3.3V+10%/-5% Change Input/output leackage currant from ±1µA to ±2µA Modi

Samsung Semiconductor
Samsung Semiconductor
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[1]    

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