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KM718V849 PDF Datasheet

The KM718V849 is (km736v749 / Km718v849) 128kx36 & 256kx18 Pipelined Ntram. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 KM718V849
(KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAM

KM736V749 KM718V849 Document Title 128Kx36 & 256Kx18 Pipelined NtRAMTM 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75 2. Changed DC condition at Icc and parameters ISB1 ; from 10mA to 30mA, ISB2 ; from 10mA to 30mA. Add VDDQ Supply voltage( 2.5V I/O ) Changed VOL Max value

Samsung Semiconductor
Samsung Semiconductor
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Recommended search results related to KM718V849

Part No Description ( Function) Manufacturers PDF
KM718V847   (KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM

KM736V747 KM718V847 Document Title 128Kx36 & 256Kx18 Flow-Through NtRAMTM 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Changed tCD from 8.0ns to 8.5ns at -8 2. Changed tCYC from 13ns to 12ns at -10 3. Changed DC c

Samsung Semiconductor
Samsung Semiconductor
datasheet pdf
KM718V887   256Kx18 Synchronous SRAM

KM718V887 Document Title 256Kx18-Bit Synchronous Burst SRAM 256Kx18 Synchronous SRAM Revision History Rev. No. 0.0 0.1 History Initial draft Modify power down cycle timing & Interleaved read timing, Insert Note 4 at AC timing characteristics. Change ISB1 value from 10mA to 30mA

Samsung semiconductor
Samsung semiconductor
datasheet pdf

[1]    

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