No | Part number | Description ( Function ) | Manufacturers | |
1 | KM718V849 | (KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAM KM736V749 KM718V849 Document Title 128Kx36 & 256Kx18 Pipelined NtRAMTM 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75 2. Changed DC condition at Icc and parameters ISB1 ; from 10mA to 30mA, ISB2 ; from 10mA to 30mA. Add VDDQ Supply voltage( 2.5V I/O ) Changed VOL Max value |
Samsung Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to KM718V849 |
Part No | Description ( Function) | Manufacturers | |
KM718V847 | (KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM KM736V747 KM718V847 Document Title 128Kx36 & 256Kx18 Flow-Through NtRAMTM 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Changed tCD from 8.0ns to 8.5ns at -8 2. Changed tCYC from 13ns to 12ns at -10 3. Changed DC c |
Samsung Semiconductor |
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KM718V887 | 256Kx18 Synchronous SRAM KM718V887 Document Title 256Kx18-Bit Synchronous Burst SRAM 256Kx18 Synchronous SRAM Revision History Rev. No. 0.0 0.1 History Initial draft Modify power down cycle timing & Interleaved read timing, Insert Note 4 at AC timing characteristics. Change ISB1 value from 10mA to 30mA |
Samsung semiconductor |
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Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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ON Semiconductor |
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