| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | KM68V1000B | (KM68V1000B / KM68U1000B) 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM KM68V1000B, KM68U1000B Family Document Title 128K x8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 1.0 2.0 Initial draft Finalize Revise - Change datasheet format Draft Data Remark August 12, 1995 Preliminary April 12, 1996 March 7, 1998 Final Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Ele |
 Samsung semiconductor |
|
0 1 2 3 4 5 6 7 8 9 |
Recommended search results related to KM68V1000B |
| Part No | Description ( Function) | Manufacturers | |
| KM681000B | 128K x 8-bit Low Power CMOS Static RAM KM681000B Family 128K x8 bit Low Power CMOS Static RAM FEATURES ¡Ü ¡Ü PRELIMINARY CMOS SRAM GENERAL DESCRIPTION The KM681000B family is fabricated by SAMSUNG's advanced CMOS process technology. The family can support various operating temperature ranges and have various pack |
 Samsung |
|
| KM681000BL | 128K x 8-bit Low Power CMOS Static RAM KM681000B Family PRELIMINARY CMOS SRAM 128K x8 bit Low Power CMOS Static RAM FEATURES ¡Ü Process Technology : 0.6§- CMOS ¡Ü Organization : 128Kx8 ¡Ü Power Supply Voltage : Single 5.0V ¡¾ 10% ¡Ü Low Data Retention Voltage : 2V(Min) ¡Ü Three state output and TTL Com |
Samsung |
|
| KM681000BL-L | 128K x 8-bit Low Power CMOS Static RAM KM681000B Family PRELIMINARY CMOS SRAM 128K x8 bit Low Power CMOS Static RAM FEATURES ¡Ü Process Technology : 0.6§- CMOS ¡Ü Organization : 128Kx8 ¡Ü Power Supply Voltage : Single 5.0V ¡¾ 10% ¡Ü Low Data Retention Voltage : 2V(Min) ¡Ü Three state output and TTL Com |
Samsung |
|
| KM681000BLE | 128K x 8-bit Low Power CMOS Static RAM KM681000B Family PRELIMINARY CMOS SRAM 128K x8 bit Low Power CMOS Static RAM FEATURES ¡Ü Process Technology : 0.6§- CMOS ¡Ü Organization : 128Kx8 ¡Ü Power Supply Voltage : Single 5.0V ¡¾ 10% ¡Ü Low Data Retention Voltage : 2V(Min) ¡Ü Three state output and TTL Com |
Samsung |
|
| KM681000BLE-L | 128K x 8-bit Low Power CMOS Static RAM KM681000B Family PRELIMINARY CMOS SRAM 128K x8 bit Low Power CMOS Static RAM FEATURES ¡Ü Process Technology : 0.6§- CMOS ¡Ü Organization : 128Kx8 ¡Ü Power Supply Voltage : Single 5.0V ¡¾ 10% ¡Ü Low Data Retention Voltage : 2V(Min) ¡Ü Three state output and TTL Com |
Samsung |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
|||